The device is designed to chemical analysis of surface, concentration mapping and depth profiling of chemical composition in metal materials by SIMS method.
The device MiniSIMS with Ga ion source is equipped by a quadrupole detector of chemical elements of atomic number higher than 2. The operating voltage and current is about 6kV/3nA under vacuum in the order of 10-7 mbar. Samples of maximum dimension of ø12.5 x 6.5 mm can be analysed in static or dynamic mode. The static mode is suitable for surface chemical analysis or mapping of chemical elements. The dynamic mode is suitable for measurement of depth concentration profiles (in the order of nm).